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ST 2SD882H
NPN Silicon Power Transistor
The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain.
E C B
TO-126 Plastic Package
Absolute Maximum Ratings (Ta = 25 C) Parameter
O
Symbol VCBO VCEO VEBO IC ICP Ptot Ptot Tj TS
Value 60 30 5 3 7 1 10 150 - 55 to + 150
Unit V V V A A W W
O
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (pulse) Total Power Dissipation(Ta = 25 OC) Total Power Dissipation(TC = 25 OC) Junction Temperature Storage Temperature Range
C C
O
Characteristics at Ta = 25 OC Parameter
DC Current Gain at VCE = 2 V, IC = 1 A Current Gain Group
Symbol hFE hFE hFE hFE hFE ICBO IEBO VCEsat VBEsat fT Cob
Min. 60 100 160 200 30 -
Typ. 90 45
Max. 120 200 320 400 1 1 0.5 2 -
Unit A A V V MHz pF
at VCE = 2 V, IC = 20 mA Collector Cutoff Current at VCB = 60 V Emitter Cutoff Current at VEB = 3 V Collector Emitter Saturation Voltage at IC = 2 A, IB = 0.2 A Base Emitter Saturation Voltage at IC = 2 A, IB = 0.2 A Gain Bandwidth Product at VCE = 5 V, IC = 0.1 A Output Capacitance at VCB = 10 V, f = 1 MHz
R Q P E
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 13/09/2006
ST 2SD882H
TYPICAL CHARACTERISTICS (Ta=25 C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
NOTE 1.Aluminum heat sink of 1.0 mm thickness. 2.With no insulator film. 3.With silicon compound.
o
DERATING CURVES FOR ALL TYPES
THERMAL RESISTANCE vs. PULSE WIDTH VCE=10V I C=1.0A 30 Duty=0.001
10
PT-Total Power Dissipation-W
100
dT-Percentage of Rated Current-%
8 6
100 cm 2
80
Di ss
ite d
Rth-Thermal Resistance- oC/W
S/b
Lim
10 3
fin In ite at he nk si
ip
60 40
at io n Li m d ite
4
1 0.3
25c m
2
9cm 2
2
Without
20
heat sin k
0 0 50 100 150 Ta-Ambient Temperature -o C
0.1 0 50 100 150
0.3
1
3
10
30
100 300
1000
PW-Pulse Width-mS
Tc-Case Temperature -o C
SAFE OPERATING AREAS 10 3
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 2.0 1000 Pulse Test 10 9 8 7 6 5 0.8 4 3 0.4 I B=1mA 2 300
h FE-DC Current Gain
DC CURRENT GAIN, BASE TO EMITTER VOLTAGE vs. COLLECTOR CURRENT VCE=2.0V Pulse Test h FE 100 60 30 3
1.6
I C-Collector Current-A
IC-Collector Current-A
1 0.3
1.2
VCEO MAX.
0.1 0.03
NOTE 1.TC=25o C 2.Curves must be derated Iinearly with increase of temperature and Duty Cycle.
10 6 3
VBE
1 0.6 0.3
0.01 1 3 6 10 30 60 100 VCE-Collector to Emitter Voltage-V
0
1 0.001 0.003 0.01 0.03 0.1 0.3 4 8 12 16 20
1
3
10
0.1
I C-Collector Current-A
o VCE-Collector to Emitter Voltage-V
BASE AND COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT 10
VBE(sat)-Base Saturation Voltage-v VCE(sat)-Collector Saturation Voltage-V
GAIN BANDWIDTH PRODUCT vs. COLLCETOR CURRENT 1000 300 VCE=5.0V Forced air cooling (with heat sink)
Cib-Input Capacitance-pF Cob-Output Capacitance-pF
INPUT AND OUTPUT CAPACITANCE vs. REVERSE VOLTAGE f=1.0MHz I E=0(Cob) I C=0(Cib) Cib 100 60 30 Cob
3 1 0.6 0.3 0.1 0.06 0.03 0.01 0.006 0.003 0.001 0.003 0.01 0.03 0.1 0.3 VCE(sat) VBE(sat)
I C=10.IB Pulse Test
fT-Gain Bandwidth Product-MHz
300
100 30 10 3
10 6 3
1
3
10
1 0.01 0.03 0.1 0.3 1 1 3 6 10 30 60 I C-Collcetor Current-A VCB-Collector to Base Voltage-V VEB-Emitter to Base Voltage-V
I C-Collector Current-A
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 13/09/2006
VBE-Base Emitter Voltage-V
I C(pulse) MAX.(PW 10ms,Duty Cycle 50%) PW 1m 10 s =1 I C(DC) MAX. ms 00 DC s Di ss (S ip ing at L io le S/ n no imit b ed nr Li ep m et ite itiv d ep uls e)

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